General Description
The 2N3906 is a commonly used PNP bipolar junction transistor (BJT) designed for general-purpose low-power amplification and switching applications
Specifications
1. Type: PNP Bipolar Junction Transistor
2. Package: TO-92 (through-hole)
3. Maximum Ratings:
• Collector-Emitter Voltage (Vceo): -40V
• Collector-Base Voltage (Vcbo): -40V
• Emitter-Base Voltage (Vebo): -5V
• Collector Current (Ic): -200mA
• Total Power Dissipation (Pd): 625mW (at Ta = 25°C)
• Junction Temperature (Tj): -55°C to 150°C
4. Electrical Characteristics:
• DC Current Gain (hFE): 100 to 300 (at Ic = -10mA, Vce = -1V)
• Collector-Emitter Saturation Voltage (Vce(sat)): -0.4V (max, at Ic = -10mA, Ib = -1mA)
• Base-Emitter Saturation Voltage (Vbe(sat)): -0.95V (max, at Ic = -10mA, Ib = -1mA)
5. Frequency Characteristics:
• Transition Frequency (fT): 250 MHz (typical, at Vce = -10V, Ic = -1mA)
6. Applications:
•Low-power amplification circuits.
•Signal switching circuits.
•General-purpose electronic applications.
Features
• Low noise and high-speed operation.
• High current gain.
• Compact and lightweight (TO-92 package).